国際半導体製造装置材料協会(国際半導体製造装置材料協会規格)
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| タイトル | ハンドブック情報 | |||
|---|---|---|---|---|
| 年号 | 巻号 | 分野 | ||
| SEMI C1-88 | SPECIFICATIONS FOR REAGENTS | 1988 | 1 | Chemicals |
| SEMI C1 STD.1-85 | STANDARD FOR ACETIC ACID | 1988 | 1 | Chemicals |
| SEMI C1 STD.2-85 | STANDARD FOR ACETONE | 1988 | 1 | Chemicals |
| SEMI C1 STD.3-88 | STANDARD FOR AMMONIUM FLUORIDE 40% SOLUTION | 1988 | 1 | Chemicals |
| SEMI C1 STD.4-85 | STANDARD FOR AMMONIUM HYDROXIDE | 1988 | 1 | Chemicals |
| SEMI C1 STD.5-85 | STANDARD FOR n-BUTYL ACETATE | 1988 | 1 | Chemicals |
| SEMI C1 STD.6-85 | STANDARD FOR DICHLOROMETHANE(METHYLENE CHLORIDE) | 1988 | 1 | Chemicals |
| SEMI C1 STD.7-85 | STANDARD FOR HYDROCHLORIC ACID | 1988 | 1 | Chemicals |
| SEMI C1 STD.8-82 | STANDARD FOR HYDROFLUORIC ACID | 1988 | 1 | Chemicals |
| SEMI C1 STD.9-85 | STANDARD FOR HYDROGEN PEROXIDE | 1988 | 1 | Chemicals |
| SEMI C1 STD.10-85 | STANDARD FOR METHANOL | 1988 | 1 | Chemicals |
| SEMI C1 STD.11-85 | STANDARD FOR METHYL ETHYL KETONE | 1988 | 1 | Chemicals |
| SEMI C1 STD.12-85 | STANDARD FOR NITRIC ACID | 1988 | 1 | Chemicals |
| SEMI C1 STD.13-85 | STANDARD FOR PHOSPHORIC ACID | 1988 | 1 | Chemicals |
| SEMI C1 STD.14-85 | STANDARD FOR POTASSIUM HYDROXIDE PELLETS | 1988 | 1 | Chemicals |
| SEMI C1 STD.15-85 | STANDARD FOR 2-PROPANOL | 1988 | 1 | Chemicals |
| SEMI C1 STD.16-85 | STANDARD FOR SULFURIC ACID | 1988 | 1 | Chemicals |
| SEMI C1 STD.17-85 | STANDARD FOR TETRACHLOROETHYLENE | 1988 | 1 | Chemicals |
| SEMI C1 STD.18-85 | STANDARD FOR TOLUENE | 1988 | 1 | Chemicals |
| SEMI C1 STD.19-85 | STANDARD FOR TRICHLOROETHYLENE | 1988 | 1 | Chemicals |
| SEMI C1 STD.20-85 | STANDARD FOR TRICHLOROTRIFLUOROETHANE | 1988 | 1 | Chemicals |
| SEMI C1 STD.21-85 | STANDARD FOR XYLENES | 1988 | 1 | Chemicals |
| SEMI C1 STD.22-85 | STANDARD FOR SODIUM HYDROXIDE PELLETS | 1988 | 1 | Chemicals |
| SEMI C1 STD.23-86 | STANDARD FOR HEXAMITHYLDISILAZANE(HMDS)(PROPOSED) | 1988 | 1 | Chemicals |
| SEMI C1 STD.24-86 | STANDARD FOR 1,1,1-TRICHLOROETHANE、ELECTRONICS GRADE | 1988 | 1 | Chemicals |
| SEMI C1 STD.25-86 | STANDARD FOR 1-METHYL-2-PYRROLIDINONE | 1988 | 1 | Chemicals |
| SEMI C1 STD.26-88 | STANDARD FOR 1,1,1 TRICHLOROETHANE,FURNACE GRADE(PROPOSED) | 1988 | 1 | Chemicals |
| SEMI C2-86 | SPECIFICATIONS FOR ETCHANTS | 1988 | 1 | Chemicals |
| SEMI C2 STD.1-86 | STANDARD FOR MIXED ACID ETCHANTS | 1988 | 1 | Chemicals |
| SEMI C2 STD.2-86 | STANDARD FOR BUFFERED OXIDE ETCHANTS | 1988 | 1 | Chemicals |
| SEMI C2 STD.3-86 | STANDARD FOR PHOSPHORIC ETCHANTS | 1988 | 1 | Chemicals |
| SEMI C3-86 | SPECIFICATIONS FOR GASES | 1988 | 1 | Chemicals |
| SEMI C3 STD.1-88 | STANDARD FOR BULK LIQUID ARGON(Ar) | 1988 | 1 | Chemicals |
| SEMI C3 STD.2-88 | STANDARD FOR ARSINE(AsH3) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.3-88 | STANDARD FOR HYDROGEN CHLORIDE(HCL) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.4-88 | STANDARD FOR BULK LIQUID HYDROGEN(H2) (Proposed) | 1988 | 1 | Chemicals |
| SEMI C3 STD.5-88 | STANDARD FOR BULK LIQUID NITROGEN(N2) (Proposed) | 1988 | 1 | Chemicals |
| SEMI C3 STD.6-88 | STANDARD FOR PHOSPHINE(PH3) ELECTRONIC GRADE IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.7-88 | STANDARD FOR PHOSPHINE(PH3) LED GRADE IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.8-86 | STANDARD FOR SILANE(SiH4) EPITAXIAL GRADE IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.9-86 | STANDARD FOR SILANE(SiH4) POLYSILICON AND/OR SILICON DIOXIDE GRADE IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.10-86 | STANDARD FOR SILANE(sIH4) SILICON NITRADE GRADE IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.11-86 | STANDARD FOR SILICON TETRACHLORIDE(SiCl4) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.12-86 | STANDARD FOR AMMONIA(NH3) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.13-88 | STANDARD FOR NITROUS OXIDE(N2O) IN CYLINDERS(PROPOSED) | 1988 | 1 | Chemicals |
| SEMI C3 STD.14-84 | STANDARD FOR CARRIER GRADE ARGON (Ar) IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.15-84 | STANDARD FOR CARRIER GRADE NITROGEN(N2) IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.16-86 | STANDARD FOR ELECTRONIC GRADE OXYGEN(O2) IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.17-86 | STANDARD FOR MOS GRADE OXYGEN(O2) IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.18-86 | STANDARD FOR DICHLOROSILANE(H2SiCl2) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.19-84 | STANDARD FOR CARRIER GRADE HYDROGEN(H2) IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.20-85 | STANDARD FOR HELIUM(He) IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.21-85 | STANDARD FOR CARBON TETRAFLUORIDE(CF4) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.22-86 | STANDARD FOR BULK LIQUID OXYGEN(O2) IN CYLINDERS | 1988 | 1 | Chemicals |
| SEMI C3 STD.23-88 | STANDARD FOR OXYGEN(O2) VLSI GRADE、IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.24-88 | STANDARD FOR SULFUR HEXAFLUORIDE(SF6) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.25-85 | STANDARD FOR HEXAFLUOROETHANE(C2F6) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.26-84 | STANDARD FOR TUNGSTEN HEXAFLUORIDE(WF6) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.27-88 | STANDARD FOR BORON TRIFLUORIDE(BF3) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.28-85 | STANDARD FOR VLSI GRADE NITROGEN(N2) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.29-86 | STANDARD FOR VLSI GRADE BULK GASEOUS NITROGEN | 1988 | 1 | Chemicals |
| SEMI C3 STD.30-86 | STANDARD FOR VLSI GRADE BULK HYDROGEN(H2) (PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.31-86 | STANDARD FOR (MOS GRADE)DICHLOROSILANE(H2SiCl2) IN CYLINDERS(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.32-87 | STANDARD FOR CHLORINE(Cl2) (PROPOSED) | 1988 | 1 | Chemicals |
| SEMI C3 STD.33-87 | STANDARD FOR BORON TRICHLORIDE(BCL3) (PROPOSED) | 1988 | 1 | Chemicals |
| SEMI C3 STD.34-88 | STANDARD FOR DISILANE(Si2H6) (PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C3 STD.35-88 | STANDARD FOR VLSI GRADE HYDROGEN CHLORIDE(PROVISIONAL) | 1988 | 1 | Chemicals |
| SEMI C4-82 | METHOD OF VISCOSITY DETERMINATION、METHOD A-KINEMATIC VISCOSITY | 1988 | 1 | Chemicals |
| SEMI C5-84 | METHOD FOR THE DETERMINATION OF WATER IN PHOTORESIST | 1988 | 1 | Chemicals |
| SEMI C6 STD.1-86 | PARTICLE SPECIFICATION FOR GRADE 20/0.2 NITROGEN AND ARGON DELIVERED AS PIPELINE GAS | 1988 | 1 | Chemicals |
| SEMI D1-85 | SPECIFICATION FOR PHYSICAL AND MECHANICAL CHARACTERISTICS OF 40mm×130mm FINISHED NICKEL PLATED SUBSTRATES FOR RIGID DISKS | 1988 | 3 | Materials |
| SEMI D1-85 | SPECIFICATION FOR PHYSICAL AND MECHANICAL CHARACTERISTICS OF 40mm×130mm FINISHED NICKEL PLATED SUBSTRATES FOR RIGID DISKS | 1987 | 3 | MATERIALS |
| SEMI D2-86 | SPECIFICATION FOR ALUMINUM SUBSTRATES FOR RIGID DISKS | 1988 | 3 | Materials |
| SEMI D2-86 | SPECIFICATION FOR ALUMINUM SUBSTRATES FOR RIGID DISKS | 1987 | 3 | MATERIALS |
| SEMI D3-87 | SPECIFICATION VERTICVAL,UNIVERSAL CARRIERS FOR RIGD DISKS | 1988 | 2 | Equipment Automation |
| SEMI D3-87 | SPECIFICATION VERTICAL,UNIVERSAL CARRIERS FOR RIGID DISKS | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E1-86 | SPECIFICATION, 3"、100mm、125mm、AND 150mm PLASTIC AND METAL WAFER CARRIERS" | 1988 | 2 | Equipment Automation |
| SEMI E1-86 | SPECIFICATION, 3",100mm,125mm,AND 150mm PLASTIC AND METAL WAFER CARRIERS" | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E1 STD.1-86 | STANDARD, 3" PLASTIC AND METAL WAFER CARRIERS、GENERAL USAGE" | 1988 | 2 | Equipment Automation |
| SEMI E1 STD.1-86 | STANDARD, 3" PLASTIC AND METAL WAFER CARRIERS,GENERAL USAGE" | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E1 STD.2-86 | STANDARD, 100mm PLASTIC AND METAL WAFER CARRIERS、GENERAL USAGE | 1988 | 2 | Equipment Automation |
| SEMI E1 STD.2-86 | STANDARD, 100mm PLASTIC AND METAL WAFER CARRIERS,GENERAL USAGE | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E1 STD.3-86 | STANDARD, 125mm PLASTIC AND METAL WAFER CARRIERS、GENERAL USAGE | 1988 | 2 | Equipment Automation |
| SEMI E1 STD.3-86 | STANDARD, 125mm PLASTIC AND METAL WAFER CARRIERS,GENERAL USAGE | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E1 STD.4-86 | STANDARD, 125mm PLASTIC AND METAL WAFER CARRIERS、AUTO TRANSPORT USAGE | 1988 | 2 | Equipment Automation |
| SEMI E1 STD.4-86 | STANDARD, 125mm PLASTIC AND METAL WAFER CARRIERS,AUTO TRANSPORT USAGE | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E1 STD.5-86 | STANDARD, 150mm PLASTIC AND WAFER CARRIERS、GENERAL | 1988 | 2 | Equipment Automation |
| SEMI E1 STD.5-86 | STANDARD, 150mm PLASTIC AND METAL WAFER CARRIERS,GENERAL USAGE | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E2-86 | STANDARD, 125mm and 150mm QUARTZ AND HIGH TEMPERATURE WAFER CARRIERS | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E2 STD.1-86 | STANDARD, 125mm and 150mm QUARTZ AND HIGH TEMPERATURE WAFER CARRIERS | 1988 | 2 | Equipment Automation |
| SEMI E2 STD.1-86 | STANDARD, 125mm and 150mm QUARTZ AND HIGH TEMPERATURE WAFER CARRIERS | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E2 STD.2-86 | STANDARD, 125mm and 150mm QUARTZ AND HIGH TEMPERATURE WAFER CARRIERS | 1988 | 2 | Equipment Automation |
| SEMI E2 STD.2-88 | STANDARD, 200mm QUARTZ AND HIGH TEMPERATURE WAFER CARRIERS(Proposed) | 1988 | 2 | Equipment Automation |
| SEMI E3-83 | RECOMMENDED INSPECTION PROCEDURE 100mm QUARTZ WAFER CARRIERS | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E4-86 | EQUIPMENT COMMUNICATIONS STANDARD 1 MESSAGE TRANSFER(SECS-I) | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E4-87 | EQUIPMENT COMMUNICATIONS STANDARD 1 MESSAGE TRANSFER(SECS-I) | 1988 | 2 | Equipment Automation |
| SEMI E5-86 | EQUIPMENT COMMUNICATIONS STANDARD 2 MESSAGE CONTENT(SECS-II) | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E5-88 | EQUIPMENT COMMUNICATIONS STANDARD 2 MESSAGE CONTENT(SECS-II) | 1988 | 2 | Equipment Automation |
| SEMI E6-85 | FACILITIES INTERFACE SPECIFICATIONS FORMAT | 1988 | 2 | Equipment Automation |
| SEMI E6-85 | FACILITIES INTERFACE SPECIFICATIONS FORMAT | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E7-84 | SPECIFICATION, ELECTRICAL INTERFACES | 1988 | 2 | Equipment Automation |
| SEMI E7-84 | SPECIFICATION, ELECTRICAL INTERFACES | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E8-84 | SPECIFICATION, WAFER TRANSPORT SYSTEMS: INTERFACE COORDINATES | 1988 | 2 | Equipment Automation |
| SEMI E8-84 | SPECIFICATION, WAFER TRANSPORT SYSTEMS: INTERFACE COORDINATES | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E10-86 | GUIDELINE, EQUIPMENT RELIABILITY | 1988 | 2 | Equipment Automation |
| SEMI E10-86 | GUIDELINE, EQUIPMENT RELIABILITY | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E11-87 | GUIDELINE, 125MM PLASTIC AND METAL WAFER CARRIER APPLICATION | 1988 | 2 | Equipment Automation |
| SEMI E11-87 | GUIDELINE, 125 MM PLASTIC AND METAL WAFER CARRIER APPLICATION | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI E12-86 | DEFINITION OF STANDARD TEMPERATURE AND PRESSURE FOR USE IN EXPRESSING THE VOLUMETRIC FLOW RATE OF MASS FLOW METERS AND MASS FLOW CONTROLLERS(PROPOSED) | 1988 | 2 | Equipment Automation |
| SEMI E12-86 | DEFINITION OF STANDARD TEMPERATURE AND PRESSURE FOR USE IN EXPRESSING THE VOLUMETRIC FLOW RATE OF MASS FLOW METERS AND MASS FLOW CONTROLLERS(PROPOSED) | 1987 | 2 | EQUIPMENT AUTOMATION |
| SEMI G1-85 | SPECIFICATION, CER-DIP BASES AND CAPS | 1988 | 4 | Packaging |
| SEMI G2-87 | SEPCIFICATION, METALLIC LEADFRAMES FOR CER-DIP PACKAGES | 1988 | 4 | Packaging |
| SEMI G3-85 | SPECIFICATION, SIDEBRAZED LAMINATES | 1988 | 4 | Packaging |
| SEMI G4-86 | SPECIFICATION, INTEGRATED CIRCUIT LEADFRAME MATERIALS USED IN THE PRODUCTION OF STAMPED LEADFRAMES(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G5-87 | SPECIFICATION, CERAMIC CHIP CARRIERS | 1988 | 4 | Packaging |
| SEMI G6-83 | TEST METHOD, SEAL RING FLATNESS | 1988 | 4 | Packaging |
| SEMI G8-83 | TEST METHOD, GOLD PLATING QUALITY | 1988 | 4 | Packaging |
| SEMI G9-86 | SPECIFICATION, STAMPED LEADFRAMES FOR PLASTIC MOLDED SEMICONDUCTOR PACKAGES(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G10-86 | STANDARD METHOD, MECHANICAL MEASUREMENT FOR PLASTIC PACKAGE LEADFRAMES | 1988 | 4 | Packaging |
| SEMI G11-88 | RECOMMEND PRACTICE, RAM FOLLOWER GEL TIME AND SPIRAL FLOW OF THERMAL SETTING MOLDING COMPOUNDS | 1988 | 4 | Packaging |
| SEMI G12-82 | RECOMMEND PRACTICE, AQUEOUS EXTRACTION OF IONIC SPECIES FROM PLASTICS USED TO PACKAGE ELECTRONIC DEVICES | 1988 | 4 | Packaging |
| SEMI G13-82 | STANDARD TEST METHOD, EXPANSION CHARACTERISTICS OF MOLDING COMPOUNDS | 1988 | 4 | Packaging |
| SEMI G14-88 | GUIDELINE SPECIFYING THE DIMENSIONS AND TOLERANCES USED TO MANUFACTURE PLASTIC MOLDED DIP PACKAGE TOOLING(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G15-88 | STANDARD TEST METHOD, DIFFERENTIAL SCANNING CALORIMETRY OF MOLDING COMPOUNDS(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G16-88 | SPECIFICATION, DIMENSIONS AND TOLERANCES USED TO MANUFACTURE PLASTIC CHIP CARRIER TOOLING | 1988 | 4 | Packaging |
| SEMI G18-86 | SPECIFICATION, INTEGRATED CIRCUIT LEADFRAME MATERIAL USED IN THE PRODUCTION OF ETCHED LEADFRAMES | 1988 | 4 | Packaging |
| SEMI G19-84 | SPECIFICATION, DIP LEADFRAMES PRODUCED BY ETCHING(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G20-84 | SPECIFICATION, LEAD FINISHES FOR PLASTIC PACKAGES(ACTIVE DEVICES ONLY) | 1988 | 4 | Packaging |
| SEMI G21-84 | SPECIFICATION, PLATING INTEGRATED CIRCUIT LEADFRAMES | 1988 | 4 | Packaging |
| SEMI G22-86 | SPECIFICATION, CERAMIC PIN GRID ARRAY PACKAGES | 1988 | 4 | Packaging |
| SEMI G23-84 | TEST METHOD, MEASURING THE INDUCTANCE OF PACKAGE LEADS | 1988 | 4 | Packaging |
| SEMI G24-84 | TEST METHOD, MEASURING THE LEAD-TO-LEAD AND LOADIND CAPACITANCE OF PACKAGE LEADS | 1988 | 4 | Packaging |
| SEMI G25-84 | TEST METHOD, MEASURING THE RESISTANCE OF PACKAGE LEADS | 1988 | 4 | Packaging |
| SEMI G26-86 | SPECIFICATION, HERMETIC SLAM CHIP CARRIER LIDS | 1988 | 4 | Packaging |
| SEMI G27-85 | SPECIFICATION, FOR LEADFRAMES FOR PLASTIC MOLDED QUAD PACKAGES | 1988 | 4 | Packaging |
| SEMI G28-86 | SPECIFICATION, LEADFRAMES FOR PLASTIC MOLDED S.O.PACKAGES(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G29-86 | TEST METHOD,TRACE CONTAMINANTS IN MOLDING COMPOUNDS | 1988 | 4 | Packaging |
| SEMI G30-87 | TEST METHOD, JUNCION-TO-CASE THERMAL RESISTANCE MEASUREMENTS OF CERAMIC PACKAGES | 1988 | 4 | Packaging |
| SEMI G31-86 | TEST METHOD, DETERMINING THE ABRASIVE CHARACTERISTICS OF MOLDING COMPOUNDS(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G32-86 | GUIDELINE FOR UNENCAPSULATED THERMAL TEST CHIP | 1988 | 4 | Packaging |
| SEMI G33-86 | SPECIFICATION, PRESSED CERAMIC PIN GRID ARRAY PACKAGES | 1988 | 4 | Packaging |
| SEMI G34-86 | SPECIFICATION, CER-PACK PACKAGE CONSTRUCTIONS、INCLUDING LEADFRAMES、 SUITABLE FOR AUTOMATED ASSEMBLY BY END USERS(PROPOSED) | 1988 | 4 | Packaging |
| SEMI G35-87 | SPECIFICATION TEST METHODS FOR LEAD FINISHES ON SEMICONDUCTOR(ACTIVE) DEVICES | 1988 | 4 | Packaging |
| SEMI G36-88 | SPECIFICATION, DIMENSIONS AND TOLERANCES USED TO MANUFACTURE PLASTIC MOLDED HIGH DENSITY TAB QUAD SEMICONDUCTOR PACKAGE TOOLING | 1988 | 4 | Packaging |
| SEMI G37-88 | SPECIFICATION, DIMENSIONS AND TOLERANCES USED TO MANUFACTURE PLASTIC MOLDED SMALL OUTLINE PACKAGE TOOLING | 1988 | 4 | Packaging |
| SEMI G38-87 | TEST METHOD, STILL-AND FORCED-AIR JUNCTION-TO-AMBIENT THERMAL RESISTANCE MEASUREMENTS OF INTEGRATED CIRCUIT PACKAGES | 1988 | 4 | Packaging |
| SEMI G39-87 | SPECIFICATION, BRAZED LEAD FLATPACK CONSTRUCTIONS、INCLUDING LEADFRAMES、SUITABLE FOR AUTOMATED ASSEMBLY | 1988 | 4 | Packaging |
| SEMI G41-87 | SPECIFICATION, DUAL STRIP SOIC LEADFRAME | 1988 | 4 | Packaging |
| SEMI G42-88 | SPECIFICATION, THERMAL TEST BOARD STANDARDIZATION FOR MEASURING JUNCTION-TO-AMBIENT THERMAL RESISTANCE OF SEMICONDUCTOR PACKAGES | 1988 | 4 | Packaging |
| SEMI G43-87 | TES METHOD, JUNCTION-TO-CASE THERMAL RESISTANCE MEASUREMENTS MOLDED-PLASTIC PACKAGES | 1988 | 4 | Packaging |
| SEMI G44-87 | SPECIFICATION, LEAD FINISHES FOR GLASS TO METAL SEAL CERAMIC PACKAGES(ACTIVE DEVICES ONLY) | 1988 | 4 | Packaging |
| SEMI G45-88 | RECOMMENDED PRACTICE, FLASH CHARACTERISTICS OF THERMOSETTING MOLDING COMPOUNDS | 1988 | 4 | Packaging |
| SEMI G46-88 | Test Method, Thermal Transient Testing for Die Attachment Evaluation of Integrated Circuits | 1988 | 4 | Packaging |
| SEMI G47-88 | Specification, Plastic Molded Quad Flat Pack Leadframes(Proposed) | 1988 | 4 | Packaging |
| SEMI M1-86 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1-86 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1 STD.1-86 | STANDARD FOR 2 INCH POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1 STD.1-86 | STANDARD FOR 2 INCH POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1 STD.2-86 | STANDARD FOR 3 INCH POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1 STD.2-86 | STANDARD FOR 3 INCH POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1 STD.3-86 | STANDARD FOR 80mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1 STD.3-86 | STANDARD FOR 80mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1 STD.4-86 | STANDARD FOR 90mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1 STD.4-86 | STANDARD FOR 90mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1 STD.5-86 | STANDARD FOR 100mm POLISHED MONOCRYSTALLINE SILICON WAFERS(525μm Thickness) | 1988 | 3 | Materials |
| SEMI M1 STD.5-86 | STANDARD FOR 100mm POLISHED MONOCRYSTALLINE SILICON WAFERS(525μm Thickness) | 1987 | 3 | MATERIALS |
| SEMI M1 STD.6-86 | STANDARD FOR 100mm POLISHED MONOCRYSTALLINE SILICON WAFERS(625μm Thickness) | 1988 | 3 | Materials |
| SEMI M1 STD.6-86 | STANDARD FOR 100mm POLISHED MONOCRYSTALLINE SILICON WAFERS(625μm Thickness) | 1987 | 3 | MATERIALS |
| SEMI M1 STD.7-86 | STANDARD FOR 125mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1 STD.7-86 | STANDARD FOR 125mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1 STD.8-86 | STANDARD FOR 150mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1 STD.8-86 | STANDARD FOR 150mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1 STD.9-86 | STANDARD FOR 200mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M1 STD.9-86 | STANDARD FOR 200mm POLISHED MONOCRYSTALLINE SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1.1 -85 | SPECIFICATIONS FOR ALPHA NUMERIC MARKING OF 100 MM,125 MM,AND 150 MM SILICON WAFERS | 1987 | 3 | MATERIALS |
| SEMI M1.1-88 | SPECIFICATIONS FOR ALPHANUMERIC MARKING OF SILICON WAFERS | 1988 | 3 | Materials |
| SEMI M2-87 | SPECIFICATIONS FOR SILICON EXPITAXIAL WAFERS | 1988 | 3 | Materials |
| SEMI M2-87 | SPECIFICATIONS FOR SILICON EXPITAXIAL WAFERS | 1987 | 3 | MATERIALS |
| SEMI M3-83 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES | 1987 | 3 | MATERIALS |
| SEMI M3-88 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES | 1988 | 3 | Materials |
| SEMI M3 STD.1-83 | STANDARD FOR 1.5 INCH SAPPHIRE SUBSTRATES | 1988 | 3 | Materials |
| SEMI M3 STD.1-83 | STANDARD FOR 1.5 INCH SAPPHIRE SUBSTRATES | 1987 | 3 | MATERIALS |
| SEMI M3 STD.2-83 | STANDARD FOR 2 INCH SAPPHIRE SUBSTRATES | 1987 | 3 | MATERIALS |
| SEMI M3 STD.2-88 | STANDARD FOR 2 INCH SAPPHIRE SUBSTRATES | 1988 | 3 | Materials |
| SEMI M3 STD.3-83 | STANDARD FOR 2.25 INCH SAPPHIRE SUBSTRATES | 1988 | 3 | Materials |
| SEMI M3 STD.3-83 | STANDARD FOR 2.25 INCH SAPPHIRE SUBSTRATES | 1987 | 3 | MATERIALS |
| SEMI M3 STD.4-83 | STANDARD FOR 3 INCH SAPPHIRE SUBSTRATES | 1987 | 3 | MATERIALS |
| SEMI M3 STD.4-88 | STANDARD FOR 3 INCH SAPPHIRE SUBSTRATES | 1988 | 3 | Materials |
| SEMI M3 STD.5-83 | STANDARD FOR 100 MM SAPPHIRE SUBSTRATES | 1987 | 3 | MATERIALS |
| SEMI M3 STD.5-88 | STANDARD FOR 100MM SAPPHIRE SUBSTRATES | 1988 | 3 | Materials |
| SEMI M3 STD.6-83 | STANDARD FOR 3 INCH RECLAIMED SAPPHIRE SUBSTRATES | 1987 | 3 | MATERIALS |
| SEMI M3 STD.6-88 | STANDARD FOR 3 INCH RECLAIMED SAPPHIRE SUBSTRATES | 1988 | 3 | Materials |
| SEMI M4-83 | SPECIFICATIONS FOR SOS EPITAXIAL WAFERS | 1987 | 3 | MATERIALS |
| SEMI M4-88 | SPECIFICATIONS FOR SOS EPITAXIAL WAFERS | 1988 | 3 | Materials |
| SEMI M6-85 | SPECIFICATIONS FOR SOLAR CELL GRADE SILICON SLICES | 1988 | 3 | Materials |
| SEMI M6-85 | SPECIFICATIONS FOR SOLAR CELL GRADE SILICON SLICES | 1987 | 3 | MATERIALS |
| SEMI M6 STD.1-85 | STANDARD FOR 100mm POLYCRYSTALLINE SOLAR CELL GRADE SILICON SLICES(RECTANGULAR) | 1988 | 3 | Materials |
| SEMI M6 STD.1-85 | STANDARD FOR 100 MM POLYCRYSTALLINE SOLAR CELL GRADE SILICON SLICES(RECTANGULAR) | 1987 | 3 | MATERIALS |
| SEMI M6 STD.2-85 | STANDARD FOR 3 INCH MONOCRYSTALLINE SOLAR CELL GRADE SILICON SLICES | 1988 | 3 | Materials |
| SEMI M6 STD.2-85 | STANDARD FOR 3 INCH MONOCRYSTALLINE SOLAR CELL GRADE SILICON SLICES | 1987 | 3 | MATERIALS |
| SEMI M6 STD.3-85 | STANDARD FOR 100MM MONOCRYSTALLINE SOLA CELL GRADE SILICON SLICES | 1988 | 3 | Materials |
| SEMI M6 STD.3-85 | STANDARD FOR 100 MM MONOCRYSTALLINE SOLAR CELL GRADE SILICON SLICES | 1987 | 3 | MATERIALS |
| SEMI M6 STD.4-85 | STANDARD FOR 125MM MONOCRYSTALLINE SOLAR CELL GRADE SLICES | 1988 | 3 | Materials |
| SEMI M6 STD.4-85 | STANDARD FOR 125 MM MONOCRYSTALLINE SOLAR CELL GRADE SLICES | 1987 | 3 | MATERIALS |
| SEMI M6 STD.5-85 | STANDARD FOR 150MM MONOCRYSTALLINE SOLAR CELL GRADE SILICON SLICES | 1988 | 3 | Materials |
| SEMI M6 STD.5-85 | STANDARD FOR 150 MM MONOCRYSTALLINE SOLAR CELL GRADE SILICON SLICES | 1987 | 3 | MATERIALS |
| SEMI M7-82 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES | 1988 | 3 | Materials |
| SEMI M7-82 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES | 1987 | 3 | MATERIALS |
| SEMI M7 STD.1-82 | STANDARD FOR 2 INCH POLISHED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES | 1988 | 3 | Materials |
| SEMI M7 STD.1-82 | STANDARD FOR 2 INCH POLISHED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES | 1987 | 3 | MATERIALS |
| SEMI M7 STD.2-82 | STANDARD FOR 3 INCH POLISHED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES | 1988 | 3 | Materials |
| SEMI M7 STD.2-82 | STANDARD FOR 3 INCH POLISHED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES | 1987 | 3 | MATERIALS |
| SEMI M7 STD.3-82 | STANDARD FOR 100MM POLISHED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES(510μm THICKNESS) | 1988 | 3 | Materials |
| SEMI M7 STD.3-82 | STANDARD FOR 100 MM POLISED MONOCRYSTALLINE GADOLINIUM GALLIUM GARNET SLICES(510μm THICKNESS) | 1987 | 3 | MATERIALS |
| SEMI M8-84 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON TEST AND RECLAIMED TEST SLICES | 1988 | 3 | Materials |
| SEMI M8-84 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON TEST AND RECLAIMED TEST SLICES | 1987 | 3 | MATERIALS |
| SEMI M8 STD.1-85 | STANDARD FOR 2 INCH POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED SLICES | 1988 | 3 | Materials |
| SEMI M8 STD.1-85 | STANDARD FOR 2 INCH POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED SLICES | 1987 | 3 | MATERIALS |
| SEMI M8 STD.2-85 | STANDARD FOR 3 INCH POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED TEST SLICES | 1988 | 3 | Materials |
| SEMI M8 STD.2-85 | STANDARD FOR 3 INCH POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED TEST SLICES | 1987 | 3 | MATERIALS |
| SEMI M8 STD.3-85 | STANDARD FOR 100MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES(525μm Thickness) AND RECLAIMED TEST SLICES | 1988 | 3 | Materials |
| SEMI M8 STD.3-85 | STANDARD FOR 100 MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES(525μm Thickness) AND RECLAIMED TEST SLICES | 1987 | 3 | MATERIALS |
| SEMI M8 STD.4-85 | STANDARD FOR 100MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES(625μm Thickness) AND RECLAIMED SLICES | 1988 | 3 | Materials |
| SEMI M8 STD.4-85 | STANDARD FOR 100 MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES(625μm Thickness) AND RECLAIMED SLICES | 1987 | 3 | MATERIALS |
| SEMI M8 STD.5-85 | STANDARD FOR 125MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED SLICES | 1988 | 3 | Materials |
| SEMI M8 STD.5-85 | STANDARD FOR 125 MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED SLICES | 1987 | 3 | MATERIALS |
| SEMI M8 STD.6-85 | STANDARD FOR 150MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED SLICES | 1988 | 3 | Materials |
| SEMI M8 STD.6-85 | STANDARD FOR 150 MM POLISHED MONOCRYSTALLINE SILICON TEST SLICES AND RECLAIMED SLICES | 1987 | 3 | MATERIALS |
| SEMI M9-86 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES | 1988 | 3 | Materials |
| SEMI M9-86 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES | 1987 | 3 | MATERIALS |
| SEMI M9 STD.1-86 | STANDARD FOR ROUND 2 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR INTEGRATED CIRCUIT APPLICATION | 1988 | 3 | Materials |
| SEMI M9 STD.1-86 | STANDARD FOR ROUND 2 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR INTEGRATED CIRCUIT APPLICATION | 1987 | 3 | MATERIALS |
| SEMI M9 STD.2-86 | STANDARD FOR ROUND 3 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR INTEGRATED CIRCUIT APPLICATION | 1988 | 3 | Materials |
| SEMI M9 STD.2-86 | STANDARD FOR ROUND 3 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR INTEGRATED CIRCUIT APPLICATION | 1987 | 3 | MATERIALS |
| SEMI M9 STD.3-86 | STANDARD FOR ROUND 2 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR OPTOELECTRONIC APPLICATIONS | 1988 | 3 | Materials |
| SEMI M9 STD.3-86 | STANDARD FOR ROUND 2 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR OPTOELECTRONIC APPLICATIONS | 1987 | 3 | MATERIALS |
| SEMI M9 STD.4-86 | STANDARD FOR ROUND 3 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR OPTOELECTRONIC APPLICATIONS | 1988 | 3 | Materials |
| SEMI M9 STD.4-86 | STANDARD FOR ROUND 3 INCH DIAMETER POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR OPTOELECTRONIC APPLICATIONS | 1987 | 3 | MATERIALS |
| SEMI M10-87 | STANDARD NOMENCLATURE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON POLISHED GaAs WAFERS | 1987 | 3 | MATERIALS |
| SEMI M10-88 | STANDARD NOMENCLATURE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON POLISHED GaAs WAFERS | 1988 | 3 | Materials |
| SEMI M11-88 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR ADVANCED APPLICATIONS | 1988 | 3 | Materials |
| SEMI M12-88 | SPECIFICATIONS FOR SERIAL ALPHANUMERIC MARKING OF TH FRONT SURFACE OFWAFERS(PROPOSED) | 1988 | 3 | Materials |
| SEMI P1-83 | SPECIFICATION, HARD SURFACE PHOTOMASK SUBSTRATES | 1988 | 5 | Micropatterning |
| SEMI P2-86 Table1 | TOTAL ALLOWABLE DEFECTS FOR UNSENSITIZED PHPTOPLATES | 1988 | 5 | Micropatterning |
| SEMI P2-86 | SPECIFICATION, CHROME THIN FILMS FOR HARD SURFACE PHOTOMASKS | 1988 | 5 | Micropatterning |
| SEMI P3-86 Table1 | TOTAL ALLOWABLE DEFECTS FOR SENSITIZED PHOTOPLATES | 1988 | 5 | Micropatterning |
| SEMI P3-86 | SPECIFICATION FOR PHOTORESIST/E-BEAM RESIST FOR HARD SURFACE PHOTOPLATES | 1988 | 5 | Micropatterning |
| SEMI P4-85 Table1 | DIMENSIONS FOR ROUND QUARTZ PHOTOMASK SUBSTRATES | 1988 | 5 | Micropatterning |
| SEMI P4-85 Table2 | FLATNESS LIMITS FOR ROUND QUARTZ PHOTOMASK SUBSTRATES | 1988 | 5 | Micropatterning |
| SEMI P4-85 Table3 | EDGE CRITERIA FOR ROUND QUARTZ PHOTOMASK SUBSTRATES | 1988 | 5 | Micropatterning |
| SEMI P4-85 Table4 | GLASS SUBSTRATE DEFECT LIMITS PER PLATE | 1988 | 5 | Micropatterning |
| SEMI P4-85 | SPECIFICATION FOR ROUND QUARTZ PHOTOMASK SUBSTRATES | 1988 | 5 | Micropatterning |
| SEMI P5-86 | SPECIFICATION FOR PELLICLES | 1988 | 5 | Micropatterning |
| SEMI P5 STD.1-86 | PELLICLES FOR USE IN POLYCHROMATIC(BROADBAND)、ONE-TO-ONE(1:1) STEPPER AND SCANNING MIRROR PROJECTION SYSTEMS | 1988 | 5 | Micropatterning |
| SEMI P5 STD.2-86 | PELLICLES FOR USE IN MONOCHROMATIC、SINGLE WAVELENGTH REDUCTION STEP AND REPEAT SYSTEMS | 1988 | 5 | Micropatterning |
| SEMI P6-88 | Specification Registration Marks for photomasks(Proposed) | 1988 | 5 | Micropatterning |
| SEMI P7-82 | METHOD OF VISCOSITY DETERMINATION、METHOD A-KINEMATIC VISCOSITY | 1988 | 5 | Micropatterning |
| SEMI P8-84 | METHOD FOR THE DETERMINATION OF WATER IN PHOTORESIST | 1988 | 5 | Micropatterning |
| SEMI P9-88 | GUIDELINE FOR FUNCTIONAL TESTING OF MICROELECTRONIC RESISTS | 1988 | 5 | Micropatterning |